Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy

Titus, J.; Nguyen, H. P. T.; Mi, Z.; Perera, A. G. U.
March 2013
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p121901
Academic Journal
We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.


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