TITLE

Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector

AUTHOR(S)
Ting, David Z.-Y.; Soibel, Alexander; Khoshakhlagh, Arezou; Nguyen, Jean; Höglund, Linda; Keo, Sam A.; Mumolo, Jason M.; Gunapala, Sarath D.
PUB. DATE
March 2013
SOURCE
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p121109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate a long wavelength type-II superlattice (T2SL) complementary barrier infrared detector (CBIRD) with a double broken-gap junction bottom contact structure designed to reduce material growth demands without diminishing performance. Simulation suggests generation-recombination dark current suppression is the result of placing the electrical junction in the wide-gap hole barrier region, away from the metallurgical hole-barrier/absorber heterojunction. The lower turn-on bias of the modified CBIRD is explained in terms of junction properties. We suggest that minority carrier exclusion and extraction effects are partially responsible for the observed low diffusion-limited CBIRD dark current despite short T2SL minority carrier lifetimes.
ACCESSION #
86446868

 

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