TITLE

Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

AUTHOR(S)
Woo, Jiyong; Kim, Seonghyun; Lee, Wootae; Lee, Daeseok; Park, Sangsu; Choi, Godeuni; Cha, Euijun; Hwang, Hyunsang
PUB. DATE
March 2013
SOURCE
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p122115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiOx/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device.
ACCESSION #
86446863

 

Related Articles

  • Achieving a Low Ground Resistance using Critical Resistance Area Concept. Eduful, George; Cole, Joseph Ekow; Okyere, Philip Yaw // AIP Conference Proceedings;6/17/2010, Vol. 1247 Issue 1, p145 

    Based on response curves derived from field measurements, optimum number of vertical ground electrodes for grounding electrical installation is determined. On sites where the optimum number of the electrodes cannot reach a target ground resistance, a ‘critical resistance area...

  • Colossal electroresistance effect at metal electrode/La1-xSr1+xMnO4 interfaces. Tokunaga, Y.; Kaneko, Y.; He, J. P.; Arima, T.; Sawa, A.; Fujii, T.; Kawasaki, M.; Tokura, Y. // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p223507 

    We have studied the current-voltage (I-V) characteristics and resistance switching at the interface between metal electrodes M (=Pt, Au, Ag, Al, Ti, and Mg) and atomically flat cleaved (001) surfaces of La1-xSr1+xMnO4 (x=0–1.0) single crystals by using a three-probe method. Hysteretic I-V...

  • Printing electrode for top-contact molecular junction. Ojima, Kaoru; Otsuka, Yoichi; Matsumoto, Takuya; Kawai, Tomoji; Nakamatsu, Kenichiro; Matsui, Shinji // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p234110 

    We have developed a fabrication method of electrodes for molecular electronics based on nanotransfer printing lithography using a release agent layer and without any surface modification. A gold layer deposited on a release agent layer coating a mold can transfer to the nonmodified surfaces of...

  • Evaluation of tantalum silicon alloy systems as gate electrodes. Luan, H.; Alshareef, H. N.; Lysaght, P. S.; Harris, H. R.; Wen, H. C.; Choi, K.; Senzaki, Y.; Majhi, P.; Lee, B.-H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212110 

    The effect of Si concentration on the effective work function of tantalum silicon (Ta–Si) alloy systems as gate electrodes in direct contact with SiO2 and HfSiOx gate dielectrics has been studied extensively. It was found that the Si concentration in the Ta–Si electrodes (>=60 at....

  • The full-voltage effect and the optimal modes of the pulsed conditioning of electrodes in a vacuum. Emel’yanov, A.; Emel’yanova, E.; Kubyshkina, M. // Instruments & Experimental Techniques;Mar/Apr2005, Vol. 48 Issue 2, p219 

    The effect of full voltage on the efficiency of the pulsed conditioning of electrodes in a vacuum is assessed. The efficiency of optimal conditioning modes, estimated from the quality of the cathode surface relative to gaps of centimeter length and long-acting voltage, increases by more than two...

  • Size-variable droplet actuation by interdigitated electrowetting electrode. Chen, Jianfeng; Yu, Yuhua; Li, Jia; Lai, Yongjun; Zhou, Jia // Applied Physics Letters;12/3/2012, Vol. 101 Issue 23, p234102 

    We propose electrowetting on dielectric (EWOD) electrodes to actuate size-variable droplets. By using interdigitated fingers and maximizing them in optimized construction, we can control droplets in different sizes with the same electrode array automatically. We both do the theory calculation...

  • Programs calculate 1% and ratio-resistor pairs. Rutschow, Carl // EDN;12/16/2005, Vol. 50 Issue 26, p66 

    The article explores the idea of using computer programs to calculate all combinations of standard 1% resistors. Forming resistors of unusual values can be achieved by connecting two standard-value resistors of 1% tolerance in parallel. Visual Basic has the ability to check all standard...

  • Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell. Seul Ji Song; Kyung Min Kim; Gun Hwan Kim; Min Hwan Lee; Jun Yeong Seok; Ranju Jung; Cheol Seong Hwang // Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p112904 

    This study examined the parameter controlling the set-state resistance (Rset) of a Pt/TiO2/Pt resistive switching (RS) cell in unipolar RS mode. Although the compliance current in the current-voltage sweep had some effect on the Rset, the uncontrolled flow of charge from the parametric analyzer...

  • Specifying Resistors for Motor Control Applications. Winkler, David; Chipman, Keith // Power Electronics Technology;Nov2005, Vol. 31 Issue 11, p28 

    The article reports that thin and thick film and solid-composition resistors provide different thermal dissipation and surge-withstand characteristics which impact their abilities to handle overcurrent and overvoltage conditions. The main cause of failure in resistors in motor control circuits...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics