Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

Woo, Jiyong; Kim, Seonghyun; Lee, Wootae; Lee, Daeseok; Park, Sangsu; Choi, Godeuni; Cha, Euijun; Hwang, Hyunsang
March 2013
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p122115
Academic Journal
We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiOx/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device.


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