TITLE

Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies

AUTHOR(S)
Son, Kyoung-Seok; Seok Park, Joon; Sang Kim, Tae; Kim, Hyun-Suk; Seo, Seok-Jun; Kim, Sun-Jae; Baek Seon, Jong; Hwan Ji, Kwang; Kyeong Jeong, Jae; Kwan Ryu, Myung; Lee, Sangyoon
PUB. DATE
March 2013
SOURCE
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p122108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The optical absorption in the sub-gap region of amorphous indium zinc oxide films and the photo-induced negative bias stability of the resulting thin film transistors were studied. As the indium ratio increases, optical absorption via sub-gap states increases, and the threshold voltage degradation under negative bias temperature stress (NBTS) with light illumination becomes more severe. By applying high pressure anneal treatments in oxygen ambient, the density of sub-gap states is reduced by an order of magnitude compared to air-annealed devices. Consequently, significant improvements are observed in the threshold voltage shifts and the stretched exponential parameters under NBTS with light illumination.
ACCESSION #
86446861

 

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