Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

Yan, C.; Jha, S. K.; Qian, J. C.; Zhou, Z. F.; He, B.; Ng, T. W.; Li, K. Y.; Zhang, W. J.; Bello, I.; Klemberg-Sapieha, J. E.; Martinu, L.
March 2013
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p122110
Academic Journal
Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of ∼0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB14 nanoparticles.


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