Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

Pradhan, N. R.; Rhodes, D.; Zhang, Q.; Talapatra, S.; Terrones, M.; Ajayan, P. M.; Balicas, L.
March 2013
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p123105
Academic Journal
By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration, we observe mobilities as high as 91 cm2 V-1 s-1 which is considerably smaller than 306.5 cm2 V-1 s-1 as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2 on SiO2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.


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