Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes

Li, Ding; Yang, Wei; Feng, Liefeng; Roth, Peter W.; He, Juan; Du, Weimin; Yang, Zhijian; Wang, Cunda; Zhang, Guoyi; Hu, Xiaodong
March 2013
Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p123501
Academic Journal
We report the stimulated emission related anomalous behavior of electrical parameters in GaN-based laser diodes based on both experiments and self-consistent calculations. In particular, the separation of quasi-Fermi levels of electrons and holes across active region shows a drop (or 'pinning') in threshold region, followed by an increase with current. The start and end points correspond to the two kink points of the first derivative of the optical output power-current (P-I) curve. This abnormal change of electrical parameters always satisfies the need of sufficient carriers for stimulated emission in the process of transition to lasing as well as lasing enhancement.


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