TITLE

Isotope-Pure Silicon Layers Grown by MBE

AUTHOR(S)
Godisov, O. N.; Kaliteevsky, A. K.; Safronov, A. Yu.; Korolev, V. I.; Ber, B. Ya.; Davydov, V. Yu.; Denisov, D. V.; Kaliteevsky, M. A.; Kop�ev, P. S.; Kovarsky, A. P.; Ustinov, V. M.; Pohl, H.-J.
PUB. DATE
December 2002
SOURCE
Semiconductors;Dec2002, Vol. 36 Issue 12, p1400
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Molecular-beam epitaxy with a solid source was used to grow silicon layers enriched with [sup 28]Si and [sup 30]Si isotopes to 99.93 and 99.34%, respectively. Secondary-ion mass spectrometry and Raman scattering spectroscopy were applied to demonstrate the high isotopic purity and crystal perfection of the layers obtained.
ACCESSION #
8633690

 

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