Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

Eddrief, M.; Marangolo, M.; Corlevi, S.; Guichar, G.-M.; Etgens, V. H.; Mattana, R.; Mosca, D. H.; Sirotti, F.
December 2002
Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4553
Academic Journal
We present the Schottky-barrier height determination for the Fe/ZnSe(001) system performed by core and valence level photoelectron emission spectroscopy. Above the thickness of 2 ML, the Fe-Fermi level position is stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. This corresponds to a Schottky-barrier height value of 1.1 eV. A bulk-like d-band electronic structure could be observed for thickness as thin as 2 ML of Fe.


Related Articles

  • Photoemission spectroscopy of GaAs:As photodiodes. McInturff, D.T.; Woodall, J.M. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p448 

    Examines the photoemission spectroscopy of gallium arsenide:arsenic photodiodes. Sensitivity of the layers to subband-gap light; Extraction of barrier height from Fowler plot; Role of arsenic clusters as internal Schottky barriers.

  • Direct assessment of tunable Schottky barriers by internal photoemission spectroscopy. Gigli, G.; Lomascolo, M.; De Vittorio, M.; Cingolani, R.; Cola, A.; Quaranta, F.; Sorba, L.; Mueller, B.; Franciosi, A. // Applied Physics Letters;7/13/1998, Vol. 73 Issue 2 

    Al/GaAs(001) junctions in which the Schottky barrier was tuned through fabrication of a pseudomorphic Si interface layer were characterized by internal photoemission spectroscopy. Well-defined photoabsorption onsets corresponding to Schottky barrier heights ranging from 0.3 to 1.1 eV were...

  • X-ray photoemission determination of the Schottky barrier height of metal contacts to n–GaN and p–GaN. Rickert, K. A.; Ellis, A. B.; Kim, Jong Kyu; Lee, Jong-Lam; Himpsel, F. J.; Dwikusuma, F.; Kuech, T. F. // Journal of Applied Physics;12/1/2002, Vol. 92 Issue 11, p6671 

    Synchrotron radiation-based x-ray photoemission spectroscopy was used to study the surface Fermi level position within the band gap for thin metal overlayers of Au, A1, Ni, Ti, Pt, and Pd on n-GaN and p-GaN. Nonequilibrium effects were taken into account by measuring the Fermi edge of the metal...

  • Magnetic Schottky diode exploiting spin polarized transport in Co/p-Si heterostructure. Sarkar, A.; Adhikari, R.; Das, A. K. // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p262402 

    Magnetic Schottky heterojunction fabricated from Co/p-Si is investigated. The diode showed proper rectifying property at all temperatures and evolution of a giant positive junction magnetoresistance is observed at temperatures below 50 K. Based on a simplified band structure, the spin...

  • Thermal stability of Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers. Yamada, Masao; Greene, Albert M.; Herrera-Gomez, Alberto; Kendelewicz, Ton; Spicer, William E. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3121 

    Examines the thermal stability of Schottky barriers at gold and silver/indium phosphide(110) interfaces. Use of photoemission spectroscopy; Observation of strong clustering; Change in Fermi level positions.

  • Schottky barrier height of metal contacts to p-type alpha 6H-SiC. Waldrop, J. R. // Journal of Applied Physics;5/1/1994, Vol. 75 Issue 9, p4548 

    Presents a survey of metal Schottky barrier contact formation to p-type silicon-face and carbon-face silicon carbide epitaxial material by using x-ray photoemission spectroscopy. Insight on the electrical characteristics of most silicon carbide devices; Methodology of the study; Results and...

  • The barrier height of Schottky diodes with a chemical-vapor-deposited diamond base. Hicks, M. C.; Wronski, C. R.; Grot, S. A.; Gildenblat, G. Sh.; Badzian, A. R.; Badzian, T.; Messier, R. // Journal of Applied Physics;3/1/1989, Vol. 65 Issue 5, p2139 

    Presents a study that measured the barrier height of Schottky diodes for aluminum and gold rectifying contacts to p-type chemical-vapor-deposited diamond thin films using the internal photoemission technique. Significance of the electrical properties of semiconductor diamond; Deposition of the...

  • A model calculation for surface plasma-enhanced internal photoemission in Schottky-barrier photodiodes. Cazeca, M. J.; Chang, C. C.; Karakashian, A. S. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3386 

    Describes a model calculation for surface plasma-enhanced internal photoemission in Schottky-barrier photodiodes. Technique used for exciting the surface plasma oscillations; Discussion of the reflectivity calculation; Calculation of the diffusion current density of the photoinjected majority...

  • Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs. Sugahara, Hirohiko; Oshima, Masaharu; Oigawa, Haruhiro; Shigekawa, Hidemi; Nannichi, Yasuo // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p4349 

    Presents a study which examined the chemistry of the (NH4)[sub2]S[subx]-treated n-gallium arsenide (GaAs) (100) surfaces. Use of synchrotron radiation photoemission spectroscopy; Schottky barrier heights of the diodes; Analysis of the binding energy for the GaAs surfaces.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics