Crossover of magnetotransport process toward spin-polarized tunneling in manganite thin films

Taniyama, T.; Yamasaki, M.; Yamazaki, Y.
December 2002
Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4562
Academic Journal
We report on the magnetoresistive features of well-characterized polycrystalline manganite thin films as a function of film thickness. A crossover of the magnetization process from domain wall displacement to magnetic rotation of each grain is observed around a thickness of 25 nm, accompanied with the maximum of the coercivity. The thickness dependence of the electrical resistivity clearly distinguishes the transport mechanism at 25 nm, below which the magnetoresistance can be well scaled by ∼(M/Ms)², using the magnetization M and the saturation magnetization M[sub S]. Spin-polarized tunneling transport between adjacent grains provides a comprehensive picture for the magnetotransport data.


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