Electrical properties of SrBi[sub 2]Ta[sub 2]O[sub 9] ferroelectric thin films at low temperature

Yang, Pingxiong; Carroll, David L.; Ballato, John; Schwartz, Robert W.
December 2002
Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4583
Academic Journal
The temperature dependence of electrical properties for SrBi[sub 2]Ta[sub 2]O[sub 9] thin film capacitors with platinum electrodes (Pt/SBT/Pt) on silicon wafers was studied from 10 to 300 K. With a decrease in temperature from 300 to 200 K, the remanent polarization of the thin films shows about an 11% reduction from its 300 K value; however, it is reduced by about 87% reduction from its 200 K value when the temperature drops from 200 to 100 K. With a decrease to 200 K, the polarization fatigue was significant, and the capacitor shows an approximate 29% reduction in polarization from its initial value following 10[sub 10] cycles. The dielectric response and leakage current of the thin films were also studied over the same lower temperature region. These results are helpful in the understanding of the fatigue-free behavior observed in SrBi[sub 2]Ta[sub 2]O[sub 9] thin films at room temperature and provide additional insight into their use for ferroelectric memory applications.


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