Hole transport in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors

Choo, M. H.; Kim, Jae Hoon; Im, Seongil
December 2002
Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4640
Academic Journal
We report on the hole transport behavior in amorphous-crystalline-mixed and amorphous pentacene thin-film transistors. Five organic thin-film transistors (OTFTs) were fabricated by evaporating the pentacene films at rates of 1, 3, 5, and 7 Ål/s at 25 °C (RT), and 7 Ã…/s at 60 °C. The field-effect mobility increased with the deposition rate even though the crystalline quality of the pentacene film degraded from an amorphous-crystalline-mixed phase to an amorphous phase. With our optimum deposition rate of 5 Ã…/s at RT, we obtained a saturation current (I[sub D-SAT]) of about 4 µA at a gate bias of -40 V, the field-effect mobility of 0.1 cm²/V s, and the on/off current ratio of 10[sup 5]. For the OTFT prepared with a deposition rate of 7 Ã…/s at 60 °C, an amorphous pentacene channel layer with a high mobility of ∼0.3 cm²/V s and the on/off current ratio of 10[sup 4] were observed.


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