GaN metal–semiconductor–metal ultraviolet photodetector with IrO[sub 2] Schottky contact

Kim, Jong Kyu; Jang, Ho Won; Jeon, Chang Min; Lee, Jong-Lam
December 2002
Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4655
Academic Journal
Iridium oxide (IrO[sub 2]) was used as the Schottky barrier materials of GaN metal-semiconductormetal (MSM) ultraviolet photodetector. Annealing an Ir contact at 500 °C under O[sub 2] ambient, the reverse leakage current density at -5 V reduced by the four orders of magnitude, to λ10[sup -6] A/cm². Simultaneously, Schottky barrier height and optical transmittance increased to 1.48 eV and 74.8% at 360 nm, respectively. The dramatic improvement originated from the formation of IrO[sub 2] by the annealing, resulting in the increase in the responsivity of the GaN MSM photodetector by one order of magnitude, in comparison with the photodetector with Pt Schottky contact.


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