TITLE

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

AUTHOR(S)
Gaska, R.; Chen, C.; Yang, J.; Kuokstis, E.; Khan, A.; Tamulaitis, G.; Yilmaz, I.; Shur, M. S.; Rojo, J. C.; Schowalter, L. J.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4658
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An approach for growing high-quality AlGaN/AlN multiple quantum wells (MQW) emitting in deep UV region is proposed. The structures are deposited on bulk AlN substrates. Structural analysis by using x-ray diffraction confirms high crystalline quality of these structures. Photoluminescence dependences on excitation intensity and temperature under band-to-band excitation of AlN barrier layers and under selective excitation of the quantum wells are presented. Al[sub 0.5]Ga[sub 0.5]N/AlN MQW grown on bulk A1N demonstrate emission at 260 nm with high emission intensity. Stimulated emission of these structures at 258 nm was observed. The results prove great potential of growing structures with high-aluminum-content layers on bulk AlN substrates.
ACCESSION #
8633231

 

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