Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

Gaska, R.; Chen, C.; Yang, J.; Kuokstis, E.; Khan, A.; Tamulaitis, G.; Yilmaz, I.; Shur, M. S.; Rojo, J. C.; Schowalter, L. J.
December 2002
Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4658
Academic Journal
An approach for growing high-quality AlGaN/AlN multiple quantum wells (MQW) emitting in deep UV region is proposed. The structures are deposited on bulk AlN substrates. Structural analysis by using x-ray diffraction confirms high crystalline quality of these structures. Photoluminescence dependences on excitation intensity and temperature under band-to-band excitation of AlN barrier layers and under selective excitation of the quantum wells are presented. Al[sub 0.5]Ga[sub 0.5]N/AlN MQW grown on bulk A1N demonstrate emission at 260 nm with high emission intensity. Stimulated emission of these structures at 258 nm was observed. The results prove great potential of growing structures with high-aluminum-content layers on bulk AlN substrates.


Related Articles

  • Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells. Cen, L. B.; Shen, B.; Huang, C. C.; Xu, F. J.; Qin, Z. X.; Zhang, G. Y.; Chen, X. S.; Lu, W. // Journal of Applied Physics;Dec2010, Vol. 108 Issue 11, p113107 

    The influence of polarization-induced electric fields on the coherent electron tunneling probability in AlN/GaN coupled double quantum wells (CDQWs) has been performed by solving Schrödinger and Poisson equations self-consistently. It is found that when the first excited state (E2) and the...

  • Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides. Li, Yan; Bhattacharyya, Anirban; Thomidis, Christos; Liao, Yitao; Moustakas, Theodore D.; Paiella, Roberto // Journal of Applied Physics;Oct2008, Vol. 104 Issue 8, p083101 

    The refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides are investigated. A large spectral broadening of TM-polarized near-infrared pulses is observed after propagation through these devices due to intersubband self-phase modulation. From the measured...

  • Ultrafast Intersubband Relaxation Dynamics and Coherent Nonlinearity in Bulk and Waveguide structures of GaN/AlN Multiple Quantum Wells. Ikuno, K.; Hamazaki, J.; Tanaka, K.; Kunugita, H.; Ema, K.; Kikuchi, A.; Kishino, K. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p477 

    We have investigated the detailed ultrafast electronic relaxation dynamics and coherent nonlinearity at optical communication wavelength in GaN/AlN multiple quantum wells (MQWs), using spectral-integrated and — resolved two-color pump-probe techniques in a wide energy range. First, we...

  • Diverse facets of InGaN quantum well microrings grown by selective area epitaxy. Feng, Wen; Kuryatkov, Vladimir V.; Rosenbladt, Dana M.; Stojanovic, Nenad; Nikishin, Sergey A.; Holtz, Mark // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p123524-1 

    InGaN quantum well (QW) microrings were grown using selective area epitaxy on patterned (0001) AlN/sapphire. The well defined shapes are comprised of [formula] and [formula] facets on inner sidewalls, and [formula] facets on outer sidewalls, as well as (0001) top surfaces. The sidewall facets...

  • Optical properties of GaN/AlN constant total effective radius multi-wells quantum rings. Solaimani, M.; Latifi, A. // Optical & Quantum Electronics;Jul2015, Vol. 47 Issue 7, p1901 

    In this study, we have investigated the effect of the number of wells and quantum ring thickness on subband energy levels, intersubband transition energies and optical properties of a constant total effective radius multi-wells quantum rings. By increasing of the number of wells from 1 to 2, we...

  • Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice. Jostmeier, Thorben; Wecker, Tobias; Reuter, Dirk; As, Donat J.; Betz, Markus // Applied Physics Letters;11/23/2015, Vol. 107 Issue 21, p1 

    We investigate the linear and dynamical nonlinearoptical properties of a superlattice composed of ultra-narrow n-doped GaN/AlN quantum wells. Owing to huge band offsets, the structures feature a broad inter-miniband transition in the telecom window at 1.55?µm. Resonant pump-probe experiments...

  • Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures. Weihuang Yang; Shuping Li; Hangyang Chen; Dayi Liu; Junyong Kang // Journal of Materials Research;Jun2010, Vol. 25 Issue 6, p6 

    The AlGaN-based ultraviolet (UV) light-emitting diode (LED) structures with AlN as buffer were grown on sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A series of cathodoluminescence (CL) spectra were measured from the cross section of the UV-LED structure using point-by-point...

  • Principal physical properties of GaN/AlN multiquantum well systems determined by density functional theory calculations. Strak, Pawel; Kempisty, Pawel; Ptasinska, Maria; Krukowski, Stanislaw // Journal of Applied Physics;May2013, Vol. 113 Issue 19, p193706 

    A critical comparison of three polarization based approaches with the fields in AlN/GaN multiple quantum wells (MQWs) systems proved that they give identical results. The direct density functional theory (DFT) results, i.e., the fields, are in qualitative agreement with data obtained within the...

  • Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes. Knauer, A.; Wenzel, H.; Kolbe, T.; Einfeldt, S.; Weyers, M.; Kneissl, M.; Tränkle, G. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p191913 

    The electroluminescence from near ultraviolet (UV) light emitting diodes containing InGaN multiple quantum wells (MQWs) with GaN, AlGaN, and InAlGaN barriers was investigated. Based on band-structure calculations the observed wavelength shift in the peak emission with increasing injection...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics