Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Schaekers, Marc; Blasco, Nicolas; Detavernier, Christophe
March 2013
Applied Physics Letters;3/18/2013, Vol. 102 Issue 11, p111910
Academic Journal
Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH3 plasma at deposition temperatures between 70 °C and 150 °C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the δ-VN crystal structure. The resistivity was as low as 200 μΩ cm for the as deposited films and further reduced to 143 μΩ cm and 93 μΩ cm by annealing in N2 and H2/He/N2, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 °C.


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