Dephasing in modulation-doped quantum structures probed by THz time-domain spectroscopy

Ascazubi, R.; Akin, O. C.; Zaman, T.; Kersting, R.; Strasser, G.
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4344
Academic Journal
A variation of Raman feature on excitation wavelength in silicon nanowires was observed. Based on the quantum size confinement effect, the resonant Raman scattering phenomenon and the existence of different sizes of Si grains in the samples, a plausible mechanism to interpret the novel feature was proposed and supported by experimental facts.


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