TITLE

Dephasing in modulation-doped quantum structures probed by THz time-domain spectroscopy

AUTHOR(S)
Ascazubi, R.; Akin, O. C.; Zaman, T.; Kersting, R.; Strasser, G.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A variation of Raman feature on excitation wavelength in silicon nanowires was observed. Based on the quantum size confinement effect, the resonant Raman scattering phenomenon and the existence of different sizes of Si grains in the samples, a plausible mechanism to interpret the novel feature was proposed and supported by experimental facts.
ACCESSION #
8563599

 

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