TITLE

On the nature of radiative recombination in GaAsN

AUTHOR(S)
Sun, B. Q.; Gal, M.; Gao, Q.; Tan, H. H.; Jagadish, C.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4368
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Radiative recombination at low temperatures in GaAsN is often associated with localized excitons. In this short note, we report results from high-resolution time-resolved photoluminescence spectroscopy that indicate that excitons, localized or otherwise, cannot be involved in the recombination process of this alloy system. The risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected, and found from excitonic recombination in other III-V materials, such as GaAs. We suggest that the radiative recombination in GaAsN takes place between localized electrons and delocalized holes.
ACCESSION #
8563572

 

Related Articles

  • Recombination processes in unintentionally doped GaTe single crystals. Zubiaga, A.; Garcıa, J. A.; Plazaola, F.; Muñoz-Sanjosé, V.; Martınez-Tomás, M. C. // Journal of Applied Physics;12/15/2002, Vol. 92 Issue 12, p7330 

    Emission spectra of GaTe single crystals in the range of 1.90-1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was...

  • Radiative recombination of GaInNP alloys lattice matched to GaAs. Izadifard, M.; Bergman, J. P.; Chen, W. M.; Buyanova, I. A.; Hong, Y. G.; Tu, C. W. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p011919 

    cw- and time-resolved photoluminescence (PL) spectroscopy is employed to evaluate dominant mechanisms for light emission in GayIn1-yNxP1-x alloys grown by gas source molecular-beam epitaxy on GaAs substrates. Different from other direct band gap dilute nitrides, the low temperature PL emission...

  • 1.22 μm GaInNAs Saturable Absorber Mirrors with Tailored Recovery Time. Puustinen, Janne; Guina, Mircea; Korpijärvi, Ville-Markus; Marcinkevicius, Saulius; Tukiainen, Antti; Kivistö, Samuli; Pessa, Markus // AIP Conference Proceedings;11/10/2010, Vol. 1288 Issue 1, p200 

    The effect of in-situ N-ion irradiation on the recombination dynamics of GaInNAs/GaAs semiconductor saturable absorber mirrors has been studied. The samples were fabricated by molecular beam epitaxy using a radio frequency plasma source for nitrogen incorporation in the absorber layers as well...

  • Influence of residual impurity background on the nonradiative recombination processes in high purity InAs/GaSb superlattice photodiodes. da Silva, E. C. F.; Hoffman, D.; Hood, A.; Nguyen, B. M.; Delaunay, P. Y.; Razeghi, M. // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p243517 

    The influence of the impurity background on the recombination processes in type-II InAs/GaSb superlattice photodiodes with a cutoff wavelength of approximately 4.8 μm was investigated by electroluminescence measurements. Using an iterative fitting procedure based on the dependence of the...

  • Time-resolved experimental study of carrier lifetime in GaN epilayers. Mickevicčius, J.; Shur, M. S.; Fareed, R. S. Qhalid; Zhang, J. P.; Gaska, R.; Tamulaitis, G. // Applied Physics Letters;12/12/2005, Vol. 87 Issue 24, p241918 

    Time-resolved photoluminescence and light-induced transient grating measurements of GaN epilayers show that the photoluminescence decay can be described by two coupled exponential terms and that carrier mobility and lifetime in GaN epilayers are correlated within the model which accounts for...

  • Boundary conditions in an electric current contact. Titov, O. Yu.; Giraldo, J.; Gurevich, Yu. G. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3108 

    In most electronic devices, the electric current of both types (electrons and holes) flows through a junction. Usually the boundary conditions have been formulated exclusively for open circuit. The boundary conditions proposed here bypass this limitation. Besides, these boundary conditions...

  • Auger recombination in silicon at low carrier densities. Yablonovitch, E.; Gmitter, T. // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p587 

    We have discovered a simple chemical preparation method for silicon which virtually eliminates surface recombination. This has enabled us to rapidly survey wafers from many different boules in order to identify those in which bulk (defect assisted) Shockley–Read–Hall recombination...

  • A Capacitance Technique for the Study of Trapping Centers in Powdered Luminophors. Bibanina, E. M.; Goryunov, V. A.; Denisov, B. N.; Nikishin, E. V. // Technical Physics Letters;Jun2000, Vol. 26 Issue 6, p470 

    A method of thermostimulated capacitance (TSC) measurements is suggested for the investigation of trapping centers and energy band structure of powdered luminophors with the recombination emission type. Expressions were derived for the capacitance of a luminophor layer in a slit planar...

  • Radiative tunneling recombination and luminescence of trapezoidal d-doped superlattices. Osipov, V. V.; Selyakov, A. Yu.; Foygel, M. // Semiconductors;Jan1999, Vol. 33 Issue 1, p89 

    Radiative recombination is investigated in the authors' previously proposed d-doped superlattice, which can be grown from one of several well-known single-crystal semiconductors of the type InSb, InAs, or GaAs. The energy diagram of the superlattice consists of alternating trapezoidal n-type and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics