On the nature of radiative recombination in GaAsN

Sun, B. Q.; Gal, M.; Gao, Q.; Tan, H. H.; Jagadish, C.
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4368
Academic Journal
Radiative recombination at low temperatures in GaAsN is often associated with localized excitons. In this short note, we report results from high-resolution time-resolved photoluminescence spectroscopy that indicate that excitons, localized or otherwise, cannot be involved in the recombination process of this alloy system. The risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected, and found from excitonic recombination in other III-V materials, such as GaAs. We suggest that the radiative recombination in GaAsN takes place between localized electrons and delocalized holes.


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