Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys

Kent, P. R. C.; Hart, Gus L. W.; Zunger, Alex
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4377
Academic Journal
Using density-functional calculations, we obtain the (001) biaxial strain dependence of the valence and conduction band energies of GaN, GaP, GaAs, InN, InP, and InAs. The results are fit to a convenient-to-use polynomial and the fits provided in tabular form. Using the calculated biaxial deformation potentials in large supercell empirical pseudopotential calculations, we demonstrate that epitaxial strain reduces the InGaN alloy bowing coefficient compared to relaxed bulk alloys.


Related Articles

  • High voltage GaInP/GaAs dual-material Schottky rectifiers. Schoen, K.J.; Harmon, E.S. // Applied Physics Letters;7/28/1997, Vol. 71 Issue 4, p518 

    Measures the breakdown voltage and reverse leakage current of gallium indium phosphide/gallium arsenide dual-material Schottky rectifiers. Effect of interfacial conduction band offset on current transport; Relation between surface density and surface leakage current; Importance of delta doping...

  • Subband characteristics of Si δ-doped pseudomorphic In[sub 0.2]Ga[sub 0.8]As/GaAs heterostructures. Huang, Zhiming; Jiang, Chunping; Zhang, Zhanhong; Lin, Tie; Chu, Junhao; Yu, Roger // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    Subband properties of Si δ-doped pseudomorphic In[sub 0.2]Ga[sub 0.8]As/GaAs heterostructures have been investigated by solving the Schro¨dinger–Kohn–Sham equation and the Poission equation self-consistently, and by the density–density dynamical response function....

  • Conduction-band tailing in parabolic band semiconductors. Chakraborty, P.K.; Biswas, J.C. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3328 

    Proposes theoretical models for the band tailing in heavily doped semiconductors. Dispersion relation for band tails in the parabolic band based on Kane's theory; Development of a differential model for the density of states under band tailing conditions.

  • Elimination of heterojunction band discontinuities by modulation doping. Schubert, E.F.; Tu, L.W. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p466 

    Examines the effect of modulation doping on conduction and valence band discontinuities. Occurrence of band discontinuities at the junction of two heterogeneous semiconductors; Application of modulation doping concept to the distributed Bragg reflectors; Comparison with step-graded distributed...

  • Comment on 'Empirical fit to band discontinuities and barrier heights in III-V alloy systems.'. McCaldin, J.O.; McGill, T.C. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2243 

    Comments on an article regarding the empirical fit to band discontinuities and barrier heights in III-V semiconductors. Views on the numerical values used in the study; Topics undiscussed in the article; Proposal of including a historical perspective.

  • The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface. Davydov, S. Yu. // Semiconductors;Oct97, Vol. 31 Issue 10, p1062 

    The generalized Anderson-Haldane band model of a semiconductor is used to consider the influence of quasi-localized electron states in the band gap on states induced by metal atoms adsorbed on the semiconductor surface. The formation of the Schottky barrier is discussed for low degrees of metal...

  • Electrical characteristics of nearly relaxed InAs/GaP heterojunctions. Chen, E.H.; Chin, T.P. // Applied Physics Letters;3/24/1997, Vol. 70 Issue 12, p1551 

    Examines the electrical properties of lattice mismatched indium arsenide/gallium phosphide heterojunctions. Details on compound semiconductor devices; Similarity of current-voltage characteristics with low reverse leakage current and high breakdown voltages; Magnitude of the conduction band...

  • Tight-binding analysis of the conduction-band structure in quantum wires. Yamauchi, T.; Arakawa, Y.; Schulman, J. N. // Applied Physics Letters;9/17/1990, Vol. 57 Issue 12, p1224 

    The tight-binding method is applied, for the first time, to the analysis of the conduction-band structure of GaAs-Al0.4Ga0.6As quantum wires which are parallel to the [110] orientation. The results indicate that the effective mass of electrons parallel to the quantum wires is about 1.45 times as...

  • Computational band-structure engineering of III–V semiconductor alloys. Geller, Clint B.; Wolf, Walter; Picozzi, Silvia; Continenza, Alessandra; Asahi, Ryoji; Mannstadt, Wolfgang; Freeman, Arthur J.; Wimmer, Erich // Applied Physics Letters;7/16/2001, Vol. 79 Issue 3 

    Accurate band structures of binary semiconductors AB (A=Al, Ga, In and B=P, As, Sb) and selected ternary III–V semiconductors were calculated using an all-electron screened exchange approach within the full potential linearized augmented plane-wave method. Fundamental band gaps and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics