Size effects on generation-recombination noise

Gomila, G.; Reggiani, L.
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4380
Academic Journal
We carry out an analytical theory of generation-recombination noise for a two-level resistor model which goes beyond those presently available by including the effects of both space charge fluctuations and diffusion current. Finite size effects are found responsible for the saturation of the low frequency current spectral density at high enough applied voltages. The saturation behavior is controlled essentially by the correlations coming from the long range Coulomb interaction. It is suggested that the saturation of the current fluctuations for high voltage bias constitutes a general feature of generation-recombination noise.


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