Interfacial properties of single-crystalline CeO[sub 2] high-k gate dielectrics directly grown on Si (111)

Nishikawa, Yukie; Yamaguchi, Takeshi; Yoshiki, Masahiko; Satake, Hideki; Fukushima, Noburu
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4386
Academic Journal
Interfacial properties of single-crystalline CeO[sub 2] high-k dielectrics directly grown on Si (111) were investigated by comparing metal-insulator-semiconductor field-effect transistors (MISFETs) without any interfacial layer [(w/o-IL); direct growth of CeO[sub 2] on Si] and those with an interfacial layer (w-IL). FET characteristics, such as the drain current and the S factor, for the w/o-IL MISFET were much worse than those for the w-IL MISFET. The in-gap states attributed to the oxygen defects were detected in the CeO[sub 2] directly grown on Si by x-ray photoelectron spectroscopy measurements. The large interface state density induced by the oxygen defects at the CeO[sub 2]/Si interface may deteriorate the w/o-IL MISFET performances.


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