Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

Jena, Debdeep; Heikman, Sten; Green, Daniel; Buttari, Dario; Coffie, Robert; Xing, Huili; Keller, Stacia; DenBaars, Steve; Speck, James S.; Mishra, Umesh K.; Smorchkova, Ioulia
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4395
Academic Journal
We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high-density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization-doped electron distributions than comparable shallow donor-doped structures, especially at low temperatures due to the removal of ionized impurity scattering. Such polarization-induced three-dimensional electron slabs can be utilized in a variety of device structures owing to their high conductivity and continuously changing energy gap.


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