TITLE

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

AUTHOR(S)
Jena, Debdeep; Heikman, Sten; Green, Daniel; Buttari, Dario; Coffie, Robert; Xing, Huili; Keller, Stacia; DenBaars, Steve; Speck, James S.; Mishra, Umesh K.; Smorchkova, Ioulia
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4395
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high-density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization-doped electron distributions than comparable shallow donor-doped structures, especially at low temperatures due to the removal of ionized impurity scattering. Such polarization-induced three-dimensional electron slabs can be utilized in a variety of device structures owing to their high conductivity and continuously changing energy gap.
ACCESSION #
8563550

 

Related Articles

  • Polarization-Dependent Inhomogeneous Broadening of the Edge Luminescence Band of Hexagonal Gallium Nitride. Kompan, M. E.; Shabanov, I. Yu.; Zhilyaev, Yu. V. // Physics of the Solid State;Jun2000, Vol. 42 Issue 6, p1041 

    A correlation of the shape of the edge luminescence band for hexagonal gallium nitride and the polarization of exciting light is revealed. The effect is explained by the existence of microregions with different directions of deformation in the plane perpendicular to the sixfold axis. � 2000...

  • Doping screening of polarization fields in nitride heterostructures. Di Carlo, Aldo; Della Sala, Fabio; Lugli, Paolo; Fiorentini, Vincenzo; Bernardini, Fabio // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is...

  • Integrated optic adiabatic polarization splitter on silicon. Shani, Yosi; Henry, Charles H.; Kistler, R. C.; Kazarinov, R. F.; Orlowsky, K. J. // Applied Physics Letters;1/8/1990, Vol. 56 Issue 2, p120 

    An adiabatic polarization splitter, fabricated with silica and silicon nitride films on a silicon substrate, is demonstrated. A rejection of the unwanted polarization (cross talk) of -20 to -34 dB was achieved with single filtering and -35 to -45 dB with double filtering. The device had a 1.5 dB...

  • Influence of polarization charges in Al[sub 0.4]Ga[sub 0.6]N/GaN barrier varactors. Saglam, M.; Mutamba, K.; Megej, A.; Sydlo, C.; Hartnagel, H. L.; Daumiller, I. // Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p227 

    In this letter, we investigate the influence of polarization charges on the characteristics of metalorganic chemical-vapor-deposition-grown A1[sub 0.4]Ga[sub 0.6]N/GaN heterostructure barrier varactors (HBVs). The current-voltage and capacitance-voltage characteristics of the AlGaN/GaN HBVs...

  • A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN. W. S. Yan; R. Zhang; Z. L. Xie; X. Q. Xiu; P. Han; H. Lu; P. Chen; S. L. Gu; Y. Shi; Y. D. Zheng; Z. G. Liu // Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG 

    Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the experimental value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN...

  • Phenomenological model for the spontaneous polarization of GaN. Yan, W. S.; Zhang, R.; Xiu, X. Q.; Xie, Z. L.; Han, P.; Jiang, R. L.; Gu, S. L.; Shi, Y.; Zheng, Y. D. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p182113 

    A phenomenological model is presented to determine the experimental value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M33 of a wurtzite GaN film is used to evaluate the experimental value...

  • Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures. Della Sala, Fabio; Di Carlo, Aldo; Lugli, Paolo; Bernardini, Fabio; Fiorentini, Vincenzo; Scholz, Reinhard; Jancu, Jean-Marc // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2002 

    Investigates the free-carrier screening of macroscopic polarization fields in wurtzite gallium nitride (GaN)/indium gallium nitride (InGaN) quantum well lasers. Use of self-consistent tight-binding approach; High carrier concentrations found experimentally in nitride lasers.

  • Diameter-dependent spin polarization of injected carriers in carbon-doped zigzag boron nitride nanotubes. Guo, C. S.; Fan, W. J.; Zhang, R. Q. // Applied Physics Letters;9/18/2006, Vol. 89 Issue 12, p123103 

    The diameter-dependent spin polarization of zigzag (n, 0) boron nitride nanotubes (5≤n≤10) with two carbon atoms substituting one boron atom and one nitrogen atom was investigated using first principles calculations. The spin polarization of the injected carriers is found in the...

  • Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature. Kalevich, V.; Afanasiev, M.; Shiryaev, A.; Egorov, A. // JETP Letters;Jan2013, Vol. 96 Issue 9, p567 

    The intensity and giant circular polarization of edge luminescence in a longitudinal magnetic field have been measured in nitrogen alloys GaAsN under circularly polarized pumping. It has been found that these dependences are shifted with respect to zero field by a value B. The magnitude of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics