Cu/SiO[sub 2-x] nanowires with compositional modulation structure grown via thermal evaporation

Wang, Y. G.; Jin, A. Z.; Zhang, Z.
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4425
Academic Journal
One-dimensional compositional modulation has been achieved in Cu/SiO[sub 2-x] nanowires prepared at the substrate temperature of 1000°C by thermal evaporation of a cuprous oxide and silicon mono-oxide mixture. The synthesized nanowires consist of the Cu spheres uniformly piled up along the longitudinal direction of the nanowires to form a modulation structure with an average period of about 140 nm. This periodicity could be adjusted by changing the CuO concentration in the source materials mixture.


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