TITLE

Nanowire resonant tunneling diodes

AUTHOR(S)
Björk, M. T.; Ohlsson, B. J.; Thelander, C.; Persson, A. I.; Deppert, K.; Wallenberg, L. R.; Samuelson, L.
PUB. DATE
December 2002
SOURCE
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4458
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/µm² was observed at low temperatures.
ACCESSION #
8563499

 

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