Surface passivation of n-type crystalline Si by plasma-enhanced-chemical-vapor-deposited amorphous SiC[sub x]:H and amorphous SiC[sub x]N[sub y]:H films

Martın, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.
December 2002
Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4461
Academic Journal
Excellent passivation of n-type crystalline silicon surface is demonstrated by means of intrinsic amorphous silicon carbide (a-SiC[sub x]:H) thin films. An optimum CH[sub 4]/SiH[sub 4] ratio is determined, leading to an effective surface recombination velocity, S[sub eff], lower than 54 cm s[sup -1]. By adding a constant flow of N[sub 2] to the precursor gases, the surface passivation is improved to S[sub eff] ≤ 16 cm s[sup -1]. From infrared spectroscopy measurements of these films, it can be deduced that the N[sub 2] flow increases the carbon content of the layers for a constant CH[sub 4]/SiH[sub 4] ratio. The dependence of the effective lifetime, τ[sub eff], on the excess charge carrier density, Δn, is measured using the quasisteady-state photoconductance technique, and these curves are simulated through an electrical model based on an insulator/semiconductor structure.


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