Suppression of silicidation in ZrO[sub 2]/SiO[sub 2]/Si structure by helium annealing

Muraoka, Kouichi
November 2002
Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4171
Academic Journal
Suppression of silicidation in ZrO[SUB2]/SiO[SUB2]/Si structure by high-temperature helium (He) gas annealing was demonstrated. Comparison of ultrahigh vacuum, 1 Torr N[SUB2] and He annealing with controlled oxygen partial pressure (P[SUBo[SUB2]]) at 920 °C revealed that the optimal P[SUBo][SUB2]] range in He at which the thermal stability of the layered structure can be achieved is over one order wider than that in N[SUB2]. This result suggests that He gas physically obstructs SiO removal through the quenching of atomic vibration and the occupation of SiO diffusion path in the ZrO[SUB2] /SiO[SUB2] layer, thus impeding the contact of ZrO[SUB2], SiO, and Si effectively, which is the trigger of silicidation. Moreover, rapid thermal He annealing is found to be the most effective means of suppressing transition of interface structure.


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