TITLE

Getting high-efficiency photoluminescence from Si nanocrystals in SiO[sub 2] matrix

AUTHOR(S)
Wang, Y. Q.; Kong, G. L.; Chen, W. D.; Diao, H. W.; Chen, C. Y.; Zhang, S. B.; Liao, X. B.
PUB. DATE
November 2002
SOURCE
Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4174
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon nanocrystals in SiO[SUB2] matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 °C to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO[SUB2] interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters.
ACCESSION #
8528092

 

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