Work function and thermal stability of Ti[sub 1-x]Al[sub x]N[sub y] for dual metal gate electrodes

Cha, Tae-Ho; Park, Dae-Gyu; Kim, Tae-Kyun; Jang, Se-Aug; Yeo, In-Seok; Roh, Jae-Sung; Park, Jin Won
November 2002
Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4192
Academic Journal
Work function and thermal stability of reactive sputtered Ti[SUB1-x]-Al[SUBx]N[SUBy] films were investigated for a metal gate electrode using a metal-oxide-semiconductor (MOS) structure. It is found that the work function (Φ[SUBM]) values of Ti[SUB1-x]Al[SUBx]N[SUBy] are ranged from 4.36 to 5.13 eV with a nitrogen partial flow rate (Æ’[SUBN2]). The φ[SUBM] values of Ti[SUB1-x]Al[SUBx]N[SUBy] films, 4.36 eV for nMOS (n-Ti[SUB1-x]Al[SUBx]N[SUBy]) and 5.10-5.13 eV for pMOS (p-Ti[SUB1-x]Al[SUBx]N[SUBy]), may be applicable to dual metal gate electrodes. Excellent thermal stability up to 1000 °C was obtained on SiO[SUB2] as observed by the negligible change of capacitance equivalent thickness and A1 2p core level spectra for p-Ti[SUB1-x]Al[SUBx]N[SUBy] (y~1.0, f[SUBN2] = 50%), whereas a limited stability was attained in case of n-Ti[SUB1-x]Al[SUBx]N[SUBy] (f[SUBN2]⩽40%). The p-Ti[SUB1-x]Al[SUBx]N[SUBy] can be a good candidate for pMOS device feasibility because of good thermal stability, while the n-Ti[SUB1-x]A1[SUBx]N[SUBy] may be applicable for nMOS gate electrode in low thermal devices using damascene gate process.


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