Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al[sub 2]O[sub 3] using atomic layer deposition

Ho, M.-Y.; Gong, H.; Wilk, G. D.; Busch, B. W.; Green, M. L.; Lin, W. H.; See, A.; Lahiri, S. K.; Loomans, M. E.; Räisänen, Petri I.; Gustafsson, T.
November 2002
Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4218
Academic Journal
We demonstrate significantly improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of A1[SUB2]O[SUB3]. The (HfO[SUB2])[SUBx](A1[SUB2]O[SUB3])[SUB1-x] films, deposited using atomic layer deposition, exhibit excellent control over a wide range of composition by a suitable choice of the ratio between the A1 and Hf precursor pulses. By this method, extremely predictable hafnium aluminate compositions are obtained, with Hf cation fractions ranging from 20% up to 100%, as measured by medium energy ion scattering. Using x-ray diffraction, we show that (HfO[SUB2])x(A1[SUB2]O[SUB3])[SUB1-x] films with Hf:A1~3:1 (25% Al) remain amorphous up to 900 °C, while films with Hf:A1~1:3 (75% Al) remain amorphous after a 1050°C spike anneal.


Related Articles

  • Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks. Samanta, Piyas; Cheng, Chin-Lung; Lee, Yao-Jen; Chan, Mansun // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p124507-1 

    A comparative study on charge carrier generation/trapping and related degradation in HfAlO/SiO2 and HfO2/SiO2 stacks with identical equivalent-oxide-thickness (EOT) is presented during constant gate voltage stress of n-type metal-oxide-semiconductor capacitors. Compared to HfO2 devices, HfAlO...

  • Nanomechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 thin films. Venkatachalam, D. K.; Bradby, J. E.; Saleh, M. N.; Ruffell, S.; Elliman, R. G. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 4, p043527 

    The mechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000...

  • Untitled. H. Y. // Electronics Weekly;12/14/2005, Issue 2222, p23 

    The article reports that Belgian research centre Interuniversity MicroElectronics Center (IMEC) has found dielectrics based on the element hafnium that look likely to be viable in 45nm processes. IMEC has also demonstrated the potential of using a NiSi gate for NMOS, and Ni2Si gate for PMOS, on...

  • Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon.  // Applied Physics Letters;5/10/1999, Vol. 74 Issue 19, p2854 

    Studies the electrical properties of hafnium silicate gate dielectrics deposited directly on silicon. Replacement of silicon dioxide as the gate dielectric material for standard complementary metal oxide semiconductor; Obtaining low leakage currents.

  • Atomic-vacancy ordering and magnetic susceptibility of nonstoichiometric hafnium carbide. Gusev, A. I.; Zyryanova, A. N. // JETP Letters;2/25/99, Vol. 69 Issue 4, p324 

    Experimental data on the magnetic susceptibility of nonstoichiometric hafnium carbide HfC[sub y](0.6

  • The how and why of thermal contraction. Cahn, Robert W. // Nature;3/6/1997, Vol. 386 Issue 6620, p22 

    Discusses a paper which reports on a detailed study of zirconium and hafnium tungstates. The discovery of the origin of contraction when the two crystals are heated; The use of X-ray analysis of the crystal structures.

  • Hafnium interdiffusion studies from hafnium silicate into silicon. Quevedo-Lopez, M.; El-Bouanani, M.; Addepalli, S.; Duggan, J. L.; Gnade, B. E.; Wallace, R. M.; Visokay, M. R.; Douglas, M.; Colombo, L. // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4192 

    The interdiffusion of Hf and Si from high-κ gate dielectric candidate (HfO[sub 2])1[sub −x](SiO[sup 2])[sup x] thin films deposited on Si (100) was studied using x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, high resolution transmission electron...

  • Erratum: “Control of silicidation in HfO2/Si(100) interfaces” [Appl. Phys. Lett. 86, 041913 (2005)]. Cho, Deok-Yong; Park, Kee-Shik; Choi, B.-H.; Oh, S.-J.; Chang, Y. J.; Kim, D. H.; Noh, T. W.; Jung, Ranju; Lee, Jae-Cheol; Bu, S. D. // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p179901 

    This article presents a correction of a previously published article regarding hafnium oxide interfaces.

  • Structural, electronic, and dielectric properties of amorphous hafnium silicates. Chen, Tsung-Ju; Kuo, Chin-Lung // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p114105 

    Using first-principles calculations, we have investigated the evolution of the structural, electronic, and dielectric properties of amorphous Hf1-xSixO2 over the entire range of composition. Our results show that the Si-rich Hf-silicates possess distinct structural characteristics from the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics