TITLE

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al[sub 2]O[sub 3] using atomic layer deposition

AUTHOR(S)
Ho, M.-Y.; Gong, H.; Wilk, G. D.; Busch, B. W.; Green, M. L.; Lin, W. H.; See, A.; Lahiri, S. K.; Loomans, M. E.; Räisänen, Petri I.; Gustafsson, T.
PUB. DATE
November 2002
SOURCE
Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4218
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate significantly improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of A1[SUB2]O[SUB3]. The (HfO[SUB2])[SUBx](A1[SUB2]O[SUB3])[SUB1-x] films, deposited using atomic layer deposition, exhibit excellent control over a wide range of composition by a suitable choice of the ratio between the A1 and Hf precursor pulses. By this method, extremely predictable hafnium aluminate compositions are obtained, with Hf cation fractions ranging from 20% up to 100%, as measured by medium energy ion scattering. Using x-ray diffraction, we show that (HfO[SUB2])x(A1[SUB2]O[SUB3])[SUB1-x] films with Hf:A1~3:1 (25% Al) remain amorphous up to 900 °C, while films with Hf:A1~1:3 (75% Al) remain amorphous after a 1050°C spike anneal.
ACCESSION #
8528076

 

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