eGaN® FET- Silicon Power Shoot-Out Volume 11: Optimizing FET On-Resistance

Strydom, Johan
October 2012
Power Electronics Technology Exclusive Insight;10/1/2012, p7
The article discusses the die size optimization process to show the performance improvements that can be achieved with eGan field effect transistor (FET) over silicon metal-oxide-semiconductor field-effect transistor (MOSFET). It discusses the optimization of eGan FETs by balancing static and dynamic losses through adjusting die size. A breakdown of the total semiconductor losses within a power FET is provided.


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