TITLE

eGaN® FET- Silicon Power Shoot-Out Volume 11: Optimizing FET On-Resistance

AUTHOR(S)
Strydom, Johan
PUB. DATE
October 2012
SOURCE
Power Electronics Technology Exclusive Insight;10/1/2012, p7
SOURCE TYPE
Periodical
DOC. TYPE
Article
ABSTRACT
The article discusses the die size optimization process to show the performance improvements that can be achieved with eGan field effect transistor (FET) over silicon metal-oxide-semiconductor field-effect transistor (MOSFET). It discusses the optimization of eGan FETs by balancing static and dynamic losses through adjusting die size. A breakdown of the total semiconductor losses within a power FET is provided.
ACCESSION #
82909488

 

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