TITLE

Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

AUTHOR(S)
Kabanov, V.; Lebiadok, Ye.; Ryabtsev, G.; Smal, A.; Shchemelev, M.; Vinokurov, D.; Slipchenko, S.; Sokolova, Z.; Tarasov, I.
PUB. DATE
October 2012
SOURCE
Semiconductors;Oct2012, Vol. 46 Issue 10, p1316
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the quantum efficiency of luminescence is no less than 91.5% for the laser samples studied.
ACCESSION #
82303862

 

Related Articles

  • Double-heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built-in index guiding by selective-area molecular beam epitaxy. Lee, Henry P.; Liu, Xiaoming; Wang, Shyh // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1014 

    We report successful fabrication of GaAs/Al0.26Ga0.74As double-heterostructure laser diodes grown on patterned Si substrates by molecular beam epitaxy. The patterned substrates consist of exposed Si stripes with widths ranging from 9 to 70 μm and surrounded by 900 Å of SiN films on both...

  • 850-nm diode lasers based on AlGaAsP/GaAs heterostructures. Vinokurov, D.; Kapitonov, V.; Lyutetskiy, A.; Nikolaev, D.; Pikhtin, N.; Slipchenko, S.; Stankevich, A.; Shamakhov, V.; Vavilova, L.; Tarasov, I. // Semiconductors;Oct2012, Vol. 46 Issue 10, p1321 

    Laser heterostructures with waveguides and emitter layers made of AlGaAs and AlGaAsP alloys are grown by hydride metal-organic vapor-phase epitaxy on a GaAs substrate and studied. It was shown that the heterostructure containing AlGaAsP layers has a large curvature radius in comparison with the...

  • Appearance of resonant Γ-X mixing in gradient GaAs/AlAs short-period superlattices. Gerlovin, I. Ya.; Dolgikh, Yu. K.; Efimov, Yu. P.; Ignat’ev, I. V.; Nedokus, I. A. // Physics of the Solid State;May98, Vol. 40 Issue 5, p756 

    We have experimentally investigated the low-temperature (10 K) luminescence and reflection spectra of a gradient GaAs/AlAs superlattice. We have examined the behavior of phonon satellites in the vicinity of the X - Γ resonance. Smooth passage through the resonance was achieved by scanning an...

  • Thermally stimulated resonant current in AlGaAs/GaAs triple barrier diodes. Nakagawa, T.; Fujita, T.; Matsumoto, Y.; Kojima, T.; Ohta, K. // Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p445 

    Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second...

  • High-Power Low-Threshold Laser Diodes (λ = 0.94 μm) Based on MBE-Grown In[sub 0.1]Ga[sub 0.9]As/AlGaAs/GaAs Heterostructures. Aleksandrov, S. B.; Alekseev, A. N.; Demidov, D. M.; Dudin, A. L.; Katsavets, N. I.; Kogan, I. V.; Pogorel’skiı, Yu. V.; Ter-Martirosyan, A. L.; Sokolov, É. G.; Chaly, V. P.; Shkurko, A. P. // Technical Physics Letters;Aug2002, Vol. 28 Issue 8, p696 

    The parameters of high-power laser diodes operating at λ = 0.94 µm, based on MBE-grown In[sup 0.1]Ga[sub 0.9]As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected dopant profiles are...

  • Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1- x As/GaAs heterostructures. Soldatenkov, F. Yu.; Danil'chenko, V. G.; Korol'kov, V. I. // Semiconductors;Feb2007, Vol. 41 Issue 2, p211 

    The possibility of controlling the effective lifetime of nonequilibrium carriers by varying the lattice mismatch between the interfaced materials of a heterostructure has been studied on the example of InGaAs/GaAs heterostructures. It was found that, at a given composition (thickness) of a...

  • Index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1-y source. Guido, L. J.; Jackson, G. S.; Plano, W. E.; Hsieh, K. C.; Holonyak, N.; Burnham, R. D.; Epler, J. E.; Thornton, R. L.; Paoli, T. L. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p609 

    A unique form of Si impurity-induced layer disordering (Si IILD) is described that utilizes a ‘‘buried’’ Si source, a (Si2)y(GaAs)1-y barrier, and a patterned external source of column III vacancies, an SiO2 cap, to define the layer disordering. This form of Si IILD is...

  • Stable continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si. Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Kaliski, R. W.; Lee, J. W.; Shichijo, H.; Epler, J. E.; Burnham, R. D.; Paoli, T. L. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p39 

    Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an AlxGa1-xAs-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the...

  • Single heterostructures for optical transport experiments. Höpfel, R. A.; Shah, J.; Chang, T. Y.; Sauer, N. J. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1815 

    We introduce a new GaAs/AlxGa1-xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics