Aluminium doped Zn1-xMgxO-A transparent conducting oxide with tunable optical and electrical properties

Fleischer, K.; Arca, E.; Smith, C.; Shvets, I. V.
September 2012
Applied Physics Letters;9/17/2012, Vol. 101 Issue 12, p121918
Academic Journal
A ternary mixed oxide Zn1-xMgxO has been doped with aluminium to create a range of transparent conducting oxides with tunable refractive index as well as work function. Conductive material was synthesised up to a magnesium concentration of x = 0.45, although the conductivity is reduced compared to standard ZnO:Al. The changes in band gap, work function, and conductivity have been attributed to a modified band structure and energetic position of the aluminium induced donor state.


Related Articles

  • High power output, low threshold, inner stripe GaInAsP laser diode on a p-type InP substrate. Imanaka, K.; Horikawa, H.; Matoba, A.; Kawai, Y.; Sakuta, M. // Applied Physics Letters;1984, Vol. 45 Issue 3, p282 

    A V-grooved, inner stripe laser diode on a p-type InP substrate emitting at 1.3 μm is reported. The maximum cw output power of 65 mW and the threshold current of 15 mA with fundamental transverse mode operation are performed. The laser has high differential quantum efficiency of 70% at 20...

  • Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique. Bennett, N. S.; Cowern, N. E. B. // Applied Physics Letters;4/23/2012, Vol. 100 Issue 17, p172106 

    In this coming decade, complementary metal-oxide-semiconductor microelectronic devices may undergo a major change with the implementation of germanium channels. Likewise, the performance of photovoltaic cells based on elemental semiconductors will continue to be optimized. Both technologies will...

  • The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide. Filonov, A. B.; Krivosheev, A. E.; Ivanenko, L. I.; Behr, G.; Schumann, J.; Souptel, D.; Borisenko, V. E. // Semiconductors;Apr2005, Vol. 39 Issue 4, p395 

    The transport and thermoelectric properties of semiconducting rhenium silicide ReSi1.75 are comprehensively studied both experimentally and theoretically. Single-crystal samples of undoped and aluminum-doped ReSi1.75 are grown by floating-zone melting using optical heating. The temperature...

  • Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer. Park, Jun Hyuk; Yeong Kim, Dong; Hwang, Sunyong; Meyaard, David; Fred Schubert, E.; Dae Han, Yu; Won Choi, Joo; Cho, Jaehee; Kyu Kim, Jong // Applied Physics Letters;8/5/2013, Vol. 103 Issue 6, p061104 

    AlxGa1-xN/GaN superlattice electron blocking layers (EBLs) with gradually decreasing Al composition toward the p-type GaN layer are introduced to GaInN-based high-power light-emitting diodes (LEDs). GaInN/GaN multiple quantum well LEDs with 5- and 9-period Al-composition-graded AlxGa1-xN/GaN EBL...

  • Perpendicular electronic transport in doping superlattices. Schubert, E. F.; Cunningham, J. E.; Tsang, W. T. // Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p817 

    Electronic transport measurements are performed at 77 and 300 K on doping superlattices in perpendicular direction to the quantum well planes. The periods of the doping superlattices range from 150 to 600 Ã…. The current-voltage characteristics in long period doping superlattices (type B) are...

  • Strain-assisted p-type doping of II-VI semiconductors. Ren, Shang Yuan; Dow, John D.; Klemm, Stefan // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2065 

    Analyzes strain-assisted p-type doping of II-VI semiconductors. Background on previous efforts to fabricate efficient light emitters and other optical devices from II-VI semiconductors; Analysis of a II-VI semiconductor by incorporating it into a strained-layer superlattice; Reasons behind the...

  • Minimization of dopant-induced random potential fluctuations in sawtooth doping superlattices. Schubert, E. F.; Harris, T. D.; Cunningham, J. E. // Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2208 

    Potential fluctuations due to random dopant distribution are estimated in a doping superlattice for different doping profiles. It is shown that statistical potential fluctuations are minimized by employing a doping profile consisting of a train of δ functions, which result in sawtooth-shaped...

  • Effects of carbon codoping on lattice locations of erbium in silicon. Huang, M. B.; Ren, X. T. // Applied Physics Letters;10/7/2002, Vol. 81 Issue 15, p2734 

    The effects of carbon codoping on the lattice location of Er atoms in silicon have been investigated using ion beam channeling. A float-zone (FZ) Si (100) wafer was first amorphized to a depth of ∼0.3 μm by Si ion implantation at 77 K. The amorphous Si layer was then implanted with...

  • Superconductivity in doped cubic silicon: An ab initio study. Bourgeois, E.; Blase, X. // Applied Physics Letters;4/2/2007, Vol. 90 Issue 14, p142511 

    The authors study within a first-principles approach the band structure, vibrational modes, and electron-phonon coupling in boron-, aluminum-, and phosphorus-doped silicon in the diamond phase. Their results provide evidences that the recently discovered superconducting transition in boron-doped...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics