Optical properties of thallium indium disulfide (TlInS2) single crystals

Karotki, A.; Sheleg, A.; Shevtsova, V.; Mudryi, A.; Mustafaeva, S.; Kerimova, E.
July 2012
Journal of Applied Spectroscopy;Jul2012, Vol. 79 Issue 3, p398
Academic Journal
Transmission, photoluminescence, and reflectance spectra of TlInS2 single crystals grown by the Bridgman-Stockbarger method were measured at 4.2 K near the fundamental absorption edge. Narrow lines at ~2.5535 and ~2.5694 eV were observed in the transmission spectrum and assigned to ground and excited free-exciton states, respectively. The free-exciton binding energy and band-gap energy Eg were found to be ~21.2 meV and ~2.5747 eV, respectively. A recombination mechanism was proposed for the TlInS2 near-band-edge and deep luminescence.


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