Conductivity of SeAs chalcogenide glassy semiconductor layers containing the EuF rare-earth impurity in high electric fields

Isayev, A.; Mekhtieva, S.; Garibova, S.; Zeynalov, V.
September 2012
Semiconductors;Sep2012, Vol. 46 Issue 9, p1114
Academic Journal
By investigating the I- V characteristics of an Al-SeAs:EuF-Te structure, it is established that, upon the application of a positive potential to Te, the current flows in it by the mechanism of space-charge-limited currents (SCLCs) of unipolar-injection, and the N-type I- V characteristic is observed for the opposite polarity. It is shown that these are processes of the thermal-field ionization of neutral and negatively charged U centers, which play a dominant role in the current-flow mechanism in the investigated structures upon the application of an electric field with intensities exceeding 10 V/cm. These are also processes of the electron-hole recombination and capture of charge carriers at U centers. The energy position and concentration of the local states, which correspond to the indicated centers and characterize the effect of the electric field-activation length are determined. It is established that it is the EuF impurities that predominantly affect the local-state concentration.


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