Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells

Ryu, Kyungsun; Upadhyaya, Ajay; Song, Hyun-Jin; Choi, Chel-Jong; Rohatgi, Ajeet; Ok, Young-Woo
August 2012
Applied Physics Letters;8/13/2012, Vol. 101 Issue 7, p073902
Academic Journal
This paper reports on an effective chemical etching treatment to remove a boron-rich layer which has a significant negative impact on n-type silicon (Si) solar cells with boron emitter. A nitric acid-grown oxide/silicon nitride stack passivation on the boron-rich layer-etched boron emitter markedly decreases the emitter saturation current density J0e from 430 to 100 fA/cm2. This led to 1.6% increase in absolute cell efficiency including 22 mV increase in open-circuit voltage Voc and 1.9 mA/cm2 increase in short-circuit current density Jsc. This resulted in screen-printed large area (239 cm2) n-type Si solar cells with efficiency of 19.0%.


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