TITLE

Coulomb blockade effect simulation to the electrical characteristic of silicon based single electron transistor

AUTHOR(S)
Nugraha, Mohamad Insan; Darma, Yudi
PUB. DATE
June 2012
SOURCE
AIP Conference Proceedings;6/21/2012, Vol. 1454 Issue 1, p211
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper, we simulate the effect of interaction between electrons on the electrical characteristic of silicon based single electron transistor (SET). The interaction between electrons is defined in the term of Coulomb blockade effect. These electrical characteristics involve conductance and I-V characteristic in SET structure. The simulation results show that when Coulomb blockade effect is included, the characteristic of I-V and conductance in SET shift to right. In addition, by reducing the quantum dot size, Coulomb blockade effect contributes greater effect. These results are shown in the characteristic of I-V and conductance which shift greater to the right in smaller quantum dot.
ACCESSION #
77190234

 

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