Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy

Choi, H. K.; Wang, C. A.; Fan, John C. C.
August 1990
Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1916
Academic Journal
Presents a study that examined graded-index separate-confinement heterostructure single-quantum well gallium arsenide (GaAs)/AlGaAs diode lasers exhibiting continuous operation at room temperature grown on silicon by organometallic vapor-phase epitaxy. Effect of defect-filtering layers on the characteristics of broad-stripe AlGaAs/GaAs-silicon diode lasers; Analysis of the different defect-filtering layers; Assessment of the dislocation density of GaAs layers on silicon.


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