TITLE

Highly uniform ion implants into GaAs by wafer rotation

AUTHOR(S)
Uchitomi, Naotaka; Mikami, Hitoshi; Toyoda, Nobuyuki
PUB. DATE
May 1990
SOURCE
Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4042
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that investigated the influence of wafer rotation on ion implanted dose uniformity in gallium arsenide semiconductor wafers. Kinds of rotating ion implantations; Examination of the dose distribution of the ion implants; Methodology.
ACCESSION #
7668952

 

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