TITLE

Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices

AUTHOR(S)
Fleetwood, D. M.
PUB. DATE
January 1990
SOURCE
Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p580
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on a study which investigated the effects of switched bias on the radiation response of metal-oxide-semiconductor (MOS) devices. Factor that establishes an upper bound on the rate of radiation-induced charge neutralization; Aspect that suggests the role of at near-interfacial hydrogen in interface-trap buildup in MOS devices; Capacity of oxide-trap and interface-trap charge buildup and annealing.
ACCESSION #
7667937

 

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