TITLE

Enhanced carrier diffusion lengths and photon transport in AlxGa1-x As/GaAs structures

AUTHOR(S)
Bradshaw, J. L.; Choyke, W. J.; Devaty, R. P.; Messham, R. L.
PUB. DATE
February 1990
SOURCE
Journal of Applied Physics;2/1/1990, Vol. 67 Issue 3, p1483
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the observation of a gallium arsenide luminescence spectrum seen through a metalorganic chemical vapor deposited (MOCVD) aluminum[subx]gallium[sub1-x] film. Experimental procedure; Carrier diffusion and photon transmission through the MOCVD layers; Discussion on the excitation mechanisms introduced in the study.
ACCESSION #
7667870

 

Related Articles

  • Organometallic vapor phase epitaxy of CoGa on (100)GaAs. Maury, F.; Talin, A.A. // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1075 

    Examines the epitaxial growth of CoGa thin films on (100)gallium arsenide substrates by organometallic chemical vapor deposition. Observation of the film composition from the gas phase composition; Characteristics of the Co-rich films; Thermodynamics of CoGa films; Adjustment of the...

  • Transport properties of GaAs[sub 1-x]N[sub x] thin films grown by metalorganic chemical vapor deposition. Ahrenkiel, R. K.; Ahrenkiel, R.K.; Johnston, S. W.; Johnston, S.W.; Keyes, B. M.; Keyes, B.M.; Friedman, D. J.; Friedman, D.J. // Applied Physics Letters;12/4/2000, Vol. 77 Issue 23 

    A series of devices with the structure GaAs/GaAs[sub 1-x]N[sub x]/GaAs and 0.01

  • Measurement of a long diffusion length in a GaAs film improved by metalorganic-chemical-vapor-deposition source purifications. Partain, L. D.; Cohen, M. J.; Cape, J. A.; Fraas, L. M.; McLeod, P. S.; Dean, C. S.; Ransom, R. A. // Journal of Applied Physics;11/15/1985, Vol. 58 Issue 10, p3784 

    Presents a study which measured the electron diffusion length of gallium arsenide epitaxial films improved by vacuum metalorganic-chemical-vapor-deposition process. Experimental details; Results and discussion; Conclusions.

  • Laser-induced homoepitaxial growth of gallium arsenide films. Chu, Shirley S.; Chu, T. L.; Chang, C. L.; Firouzi, H. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1243 

    Epitaxial gallium arsenide films have been deposited on single crystalline GaAs substrates of (100) orientation at 425–500 °C by ArF excimer laser-induced metalorganic chemical vapor deposition. The important process parameters include the cleanliness of the substrate surface,...

  • Defect reduction effects in GaAs on Si substrates by thermal annealing. Yamaguchi, Masafumi; Yamamoto, Akio; Tachikawa, Masami; Itoh, Yoshio; Sugo, Mitsuru // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2293 

    High quality GaAs films with dislocation densities of 2–3×106 cm-2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been...

  • Photoluminescence of Cd1-xMnxTe films grown by metalorganic chemical vapor deposition. Feng, Z. C.; Perkowitz, S.; Sudharsanan, R.; Erbil, A.; Pollard, K. T.; Rohatgi, A.; Bradshaw, J. L.; Choyke, W. J. // Journal of Applied Physics;8/15/1989, Vol. 66 Issue 4, p1711 

    Examines cadmium-manganese-tellurium (CMT) films grown by metalorganic chemical vapor deposition on gallium arsenide (GaAs), cadmium telluride/GaAs and cadmium sulphide/silicon dioxide glass. Use of Raman scattering and infrared spectroscopies; Stress in the CMT films; Findings of the...

  • Characterization of GaAs films grown by metalorganic chemical vapor deposition. Swaminathan, V.; Van Haren, D. L.; Zilko, J. L.; Lu, P. Y.; Schumaker, N. E. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5349 

    Examines undoped gallium arsenide (GaAs) films grown by metalorganic chemical vapor deposition in a vertical geometry atmospheric pressure reactor. Importance of GaAs as a semiconductor material; Characterization of films; Information on the surface morphology of the grown films.

  • Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates. Yamaguchi, Masafumi; Amano, Chikara; Itoh, Yoshio // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p915 

    Describes the developments in gallium arsenide (GaAs) thin-film solar cells fabricated on silicon (Si) substrates by metalorganic chemical vapor deposition. Data on the current-voltage characteristics of GaAs/Si solar cells measured under AMO illumination; Effect of dislocation density on...

  • Effects of thin GaAs insertion layer on InAs/(InGaAs)/InP(001) quantum dots grown by metalorganic chemical vapor deposition. Kwangmin Park; Pilkyung Moon; Eungjin Ahn; Sukwon Hong; Euijoon Yoon; Jeong Won Yoon; Hyeonsik Cheong; Leburton, Jean-Pierre // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223110 

    We studied the influence of a thin GaAs insertion layer (5–10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics