TITLE

The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy

AUTHOR(S)
Salokatve, A.; Hovinen, M.
PUB. DATE
April 1990
SOURCE
Journal of Applied Physics;4/1/1990, Vol. 67 Issue 7, p3378
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which examined the effects of strain on morphology and structural properties of indium gallium arsenide/indium phosphide grown by molecular beam epitaxy. Procedures of the experiment; Morphology of the epilayers; Discussion of results.
ACCESSION #
7667727

 

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