TITLE

Investigations of the interplay between crystalline and magnetic ordering in Fe3O4/NiO superlattices

AUTHOR(S)
Lind, D. M.; Borchers, J. A.; Erwin, R. W.; Ankner, J. F.; Lochner, E.; Shaw, K. A.; DiBari, R. C.; Portwine, W.; Stoyonov, P.; Berry, S. D.
PUB. DATE
November 1994
SOURCE
Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p6284
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the structural and magnetic ordering of a series of Fe[sub3]O[sub4]/NiO superlattices grown by molecular beam epitaxy, using SQUID magnetometry and both x-ray and neutron diffraction techniques. Comparison between the symmetry of Fe[sub3]O[sub4] spinel and NiO rocksalt structures; Details of the crystal growth and characterization of Fe[sub3]O[sub4] and NiO thin films; Influence of superlattice layering on the Verwey transition manifested in the iron oxide layers.
ACCESSION #
7663474

 

Related Articles

  • Enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices. Koeder, A.; Frank, S.; Schoch, W.; Avrutin, V.; Sauer, R.; Waag, A.; Zuern, K.; Ziemann, P.; Limmer, W. // Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p783 

    We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy which is due to thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced increase of the Curie temperature is strongly correlated to the In...

  • Compositional modulation and optical emission in AlGaN epitaxial films. Gao, Min; Bradley, S. T.; Cao, Yu; Jena, D.; Lin, Y.; Ringel, S. A.; Hwang, J.; Schaff, W. J.; Brillson, L. J. // Journal of Applied Physics;11/15/2006, Vol. 100 Issue 10, p103512 

    Compositional, structural, and optical properties of molecular-beam epitaxy grown AlxGa1-xN films were characterized by transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence spectroscopy. Spontaneous modulation, phase separation, and band gap reductions were observed...

  • Effect of the substrate ferroelastic transition on epitaxial La0.7Sr0.3MnO3 films grown on LaAlO3. Lehmann, A. Geddo; Sanna, C.; Lampis, N.; Congiu, F.; Concas, G.; Maritato, L.; Aruta, C.; Petrov, A. Yu. // European Physical Journal B -- Condensed Matter;Feb2007, Vol. 55 Issue 4, p337 

    Thin films of La0.7Sr0.3MnO3 were grown by molecular beam epitaxy on (001)LaAlO3 crystals. High resolution X-ray diffraction analysis proves the presence of twins in the films at room temperature, showing that the twin structure of the substrate which forms at the $Pm\bar {3}m\to R\bar {3}c$...

  • Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates. Yoko Yasutomi; Keita Ito; Tatsunori Sanai; Kaoru Toko; Takashi Suemasu // Journal of Applied Physics;2014, Vol. 115 Issue 17, p17A935-1 

    We grew Mn4N epitaxial thin films capped with Au layers on MgO(001) and SrTiO3(001) substrates by molecular beam epitaxy. Perpendicular magnetic anisotropy (PMA) was confirmed in all the samples at room temperature from the magnetization versus magnetic field curves using superconducting quantum...

  • Dependence of the structures and properties on LaAlO3 cap layer in LaAlO3/BaTiO3 superlattices. Zuo, Changming; Lu, Shengbo; Zhou, Xun; Zhang, Yu // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p012913 

    The LaAlO3/BaTiO3 artificial superlattices were fabricated on (001)-oriented Nb-doped SrTiO3 substrates by laser molecular-beam epitaxy. The structures of the superlattice were analyzed by normal θ-2θ scan mode x-ray diffraction analysis, high-resolution reciprocal space mapping...

  • Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition. Li, B.S.; Akimoto, R.; Akita, K.; Hasama, H. // Journal of Applied Physics;5/15/2004, Vol. 95 Issue 10, p5352 

    A (CdS/ZnSe)/BeTe superlattice (SL), based on wide band gap II-VI compounds, with a large band offset of 3.1 eV was grown on a GaAs (001) substrate using molecular-beam epitaxy and an intersubband transition (ISB-T) of 0.78 eV (λ 1.58µ m) with a full width at half maximum (FWHM) of 96 meV...

  • Investigation of HgTe-HgCdTe Superlattices by High-Resolution X-ray Diffraction. Hatch, S. D.; Sewell, R. H.; Dell, J. M.; Faraone, L.; Becker, C. R.; Usher, B. // Journal of Electronic Materials;Jun2006, Vol. 35 Issue 6, p1481 

    In this study, high-resolution diffraction has been used to investigate the strain state and uniformity of (001) and (112) oriented HgTe-CdTe superlattices grown by molecular beam epitaxy. A number of reciprocal space maps were taken over the surface of the grown wafer, and variations in the...

  • Lattice Defects Diffuse Scattering from Thin Films of a Ge-Si System with Low-Energy Ar and Xe Bombardment During Molecular Beam Epitaxy (MBE) Growth. Rozenak, Paul // Metallurgical & Materials Transactions. Part A;Jan2013, Vol. 44 Issue 1, p102 

    Homo-Ge, homo-Si, and hetero-SiGe alloy epitaxial layers, using molecular beam epitaxy (MBE), were grown on Ge and Si (001) substrates in order to study development of crystalline strains caused by ion bombardment during the growth of materials. Ion energies and ion/atom fluxes were used in the...

  • Crystal structure and epitaxy of Bi2Te3 films grown on Si. Park, Jihwey; Soh, Yeong-Ah; Aeppli, G.; Bland, S. R.; Zhu, Xie-Gang; Chen, Xi; Xue, Qi-Kun; Grey, Francois // Applied Physics Letters;11/26/2012, Vol. 101 Issue 22, p221910 

    We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi2Te3 grown on Si (1 1 1). The films are single crystals of high crystalline quality, which strongly depend on that of their substrates, with in-plane epitaxial...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics