TITLE

Band offsets and electronic structure of SiC/SiO2 interfaces

AUTHOR(S)
Afanas’ev, V. V.; Bassler, M.; Pensl, G.; Schulz, M. J.; Stein von Kamienski, E.
PUB. DATE
March 1996
SOURCE
Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on a study which examined the electronic structure of SiC/SiO2 interfaces for different SiC polytypes using internal photoemission of electrons from the semiconductor into the oxide. Experimental procedure; Results; Discussion; Conclusions.
ACCESSION #
7662889

 

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