TITLE

Sputtered SiNx film for self-aligned Si-Zn diffusion into GaAs and AlGaAs

AUTHOR(S)
Zou, W. X.; Boudreau, R.; Han, H. T.; Bowen, T.; Shi, Song Stone; Mui, D. S. L.; Merz, J. L.
PUB. DATE
June 1995
SOURCE
Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6244
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which described the use of sputtered silicon nitride film for self-aligned silicon-zinc diffusion into gallium arsenide and aluminum gallium arsenide semiconductors. Theoretical background on silicon and zinc diffusions; Experimental methods; Results and discussion.
ACCESSION #
7662557

 

Related Articles

  • Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices. Rao, E. V. K.; Ossart, P.; Alexandre, F.; Thibierge, H. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p588 

    By performing different annealing treatments on variously tin-doped molecular beam epitaxially grown GaAs-Ga0.72Al0.28As quantum well structures, we show here the following: (i) tin, like other donor atoms silicon and sulfur, also induces disordering by enhancing interdiffusion coefficients, and...

  • Electrical effects of plasma enhanced chemical vapor deposition of SiN[sub x] on GaAs Schottky rectifiers. Luo, B.; Johnson, J. W.; Ren, F.; Baik, K. H.; Pearton, S. J. // Journal of Applied Physics;11/1/2001, Vol. 90 Issue 9, p4800 

    The diode ideality factor, reverse breakdown voltage, and forward current characteristic were used to measure the effect on electric performance of GaAs rectifiers deposited with thin films of SiN[sub x]. Over a broad range of deposition conditions there were minimal changes (<10%) in breakdown...

  • Application of organometallic chemical vapor deposition mechanisms to lateral band-gap patterning on stepped surfaces. Colas, E.; Clausen, E. M.; Kapon, E.; Hwang, D. M.; Simhony, S. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2472 

    We report the study of organometallic chemical vapor deposition (OMCVD) on the stepped surfaces obtained by crystal growth on nonplanar vicinal (100) GaAs substrates. Scanning and transmission electron microscopy investigations were combined to identify two distinct diffusion mechanisms in...

  • Diffusion of atomic silicon in gallium arsenide. Schubert, E. F.; Stark, J. B.; Chiu, T. H.; Tell, B. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p293 

    Silicon impurities with an initial Dirac-delta-function-like distribution profile are diffused into GaAs using rapid thermal annealing. The diffusion of atomic Si is determined by a novel method of comparing experimental capacitance-voltage profiles with a corresponding self-consistent profile...

  • Electron beam irradiation enhancement of Al-Ga interdiffusion at GaAs/AlGaAs quantum well interfaces. Li, Y. J.; Tsuchiya, M.; Petroff, P. M. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p472 

    The effect of room-temperature electron beam irradiation on the Al-Ga interdiffusion at GaAs/AlGaAs quantum well heterointerfaces is investigated with low-temperature cathodoluminescence spectroscopy. The interdiffusion is enhanced by defects generated through an irradiation with a 400 keV...

  • Diffusion and drift of Si dopants in δ-doped n-type AlxGa1-xAs. Schubert, E. F.; Tu, C. W.; Kopf, R. F.; Kuo, J. M.; Lunardi, L. M. // Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2592 

    The study of diffusion and drift of Si in AlxGa1-xAs by means of capacitance-voltage measurements reveals that low substrate temperatures during growth by molecular beam epitaxy are required to achieve δ-function-like doping profiles. The diffusion coefficient of Si in Al0.3Ga0.7As is...

  • Ultrathin epitaxial Fe films on vicinal GaAs(001): A study by spin-resolved photoelectron spectroscopy. Zhang, T.; Spangenberg, M.; Greig, D.; Takahashi, N.; Shen, T.-H.; Matthew, J. A. D.; Cornelius, S.; Rendall, M.; Seddon, E. A. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p961 

    Thin epitaxial Fe films have been grown on vicinal GaAs(001) substrates and their remanent magnetic properties and the degree of substrate atom diffusion investigated using synchrotron-based photoelectron spectroscopy. The vicinal Fe films, though exhibiting greater As diffusion than their...

  • The effect of deposition rate on the growth of epitaxial Ge on GaAs (100). Eres, Djula; Lowndes, D. H.; Tischler, J. Z.; Sharp, J. W.; Haynes, T. E.; Chisholm, M. F. // Journal of Applied Physics;2/1/1990, Vol. 67 Issue 3, p1361 

    Presents a study that investigated the role of deposition rate in the growth of germanium thin films on gallium arsenide semiconductors. Application of pulsed supersonic nozzle beams in thin-film growth; Analysis of the crystallinity of the thin films; Examination of the surface morphology of...

  • High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates. Venkatasubramanian, R.; Timmons, M.L. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p886 

    Describes an approach to attain high quality gallium arsenide-aluminum gallium arsenide (GaAs-AlGaAs) thin film heterostructures on silicon using eutectic-metal-bonding. Involvement of the lattice-matched growth of thin films on germanium substrates; Presentation of room-temperature...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics