TITLE

Transmission electron microscopy and cathodoluminescence of tensile-strained GaxIn1-xP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaxIn1-xP/InP heterostructures

AUTHOR(S)
Cléton, F.; Sieber, B.; Bensaada, A.; Masut, R. A.; Bonard, J. M.; Ganière, J. D.
PUB. DATE
July 1996
SOURCE
Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p837
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Deals with a study which determined the origin of the spatial luminescence fluctuations observed between the dark line defects present in tensile strained Ga[subx]In[1-x]P/In/n-InP heterostructures. Experimental details; Beam energy experiments; Conclusion.
ACCESSION #
7662458

 

Related Articles

  • Magnetoluminescence of Ge/Ge[sub 1-x]Si[sub x] heterostructures. Chernenko, A. V.; Kalugin, N. G.; Kusnetsov, O. A. // Journal of Experimental & Theoretical Physics;Aug98, Vol. 87 Issue 2, p337 

    This paper reports on the first investigation made of luminescence of Ge/Ge[sub 1-x]Si[sub x] heterostructures at liquid-helium temperatures in a magnetic field of up to 14 T. The luminescence lines observed in the spectra are due to both free and impurity bound excitons in Ge layers. The...

  • Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure. Moiseev, K. D.; Mikhaılova, M. P.; Andreıchuk, O. V.; Samorukov, B. E.; Yakovlev, Yu. P. // Technical Physics Letters;May99, Vol. 23 Issue 5, p364 

    Intense electroluminescence is observed for the first time in a AlGaAsSb/In[sub 0.9]Ga[sub 0.1]As[sub 0.89]Sb[sub 0.21]/ AlGaAsSb double heterostructure in the 3-4 µm wavelength range at T=77 K. The structure was grown on a GaSb substrate by liquid-phase epitaxy. The photon energy at the...

  • Magnetoluminescence of Zn(Mn)Se/Be(Mn)Te semimagnetic heterostructures with a type-II band alignment. Yakovlev, D. R.; Sas, C.; Ko¨nig, B.; Hansen, L.; Ossau, W.; Landwehr, G.; Molenkamp, L. W.; Waag, A. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1870 

    Zn(Mn)Se/Be(Mn)Te semiconductor heterostructures with a type-II band alignment have been fabricated by molecular-beam epitaxy. Giant Zeeman splitting of the band states, caused by their interaction with the localized magnetic moments of Mn ions, has been observed for the spatially direct and...

  • Negative Luminescence at 3.9 �m in InGaAsSb-Based Diodes. A&icaron;daraliev, M.; Zotova, N.V.; Karandashev, S.A.; Matveev, B.A.; Remenny&icaron;, M.A.; Stus, N.M.; Talalakin, G.N. // Semiconductors;Aug2003, Vol. 37 Issue 8, p927 

    Current�voltage characteristics, as well as spectral and power�current characteristics, for the emission of InAsSbP/InGaAsSb double-heterostructure diodes grown on InAs substrates were measured under forward and reverse biases in the temperature range of 25�90�C. It was shown...

  • High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorber. Kwong, Norman S. K.; Lau, Kam Y.; Bar-Chaim, Nadav; Ury, Israel; Lee, Kevin J. // Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1879 

    A superluminescent diode (SLD) based on a proven high power, high efficiency ‘‘window-’’ type index-guided buried heterostructure laser is demonstrated. Lasing is suppressed for SLD operation by antireflection coating and by incorporating an unpumped absorber section....

  • Luminescence from Si/Si[sub 1-x]Ge[sub x] heterostructures and superlattices. Northrop, G.A.; Wolford, D.J. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p865 

    Examines luminescence originating from within silicon/silicon germanide multiple heterostructures. Manifestation of an induced-low temperature photoluminescence; Production of alloy-broadened spectra; Discussion on the epilayer-induced intrinsic radiative recombination.

  • Damage induced by plasma etching: On the correlation of results from photoluminescence and.... Linke, H.; Maximov, I. // Applied Physics Letters;3/13/1995, Vol. 66 Issue 11, p1403 

    Examines the damage induced by electron cyclotron resonance metalorganic reactive ion etching to two-dimensional electron gas in gallium arsenide/aluminum gallium arsenide heterostructures. Impairment of luminescence quality; Decrease of single-particle relaxation time; Increase of the...

  • Origin of recombination transitions at the lattice-matched GaInAsSb-GaSb n-N type-II heterojunctions. Hulicius, E.; Oswald, J.; Pangrác, J.; Šimeček, T.; Bresler, N. S.; Cheban, V. N.; Gusev, O. B.; Titkov, A. N. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p4189 

    Presents information on a study which investigated the luminescense properties of GaSb-GaInAsSb isotype type II heterojunctions with various dopings. Methodology of the study; Results and discussion; Conclusion.

  • Photoreflectance spectroscopy with white light pump beam Ghosh, Sandip; Arora, B.M.; Arora, B. M. // Review of Scientific Instruments;Mar98, Vol. 69 Issue 3, p1261 

    Examines the use of photoreflectance spectroscopy with white light pump beam to characterize semiconductor heterostructures. Generation of excitation energy values by the pump beam; Reduction of signal strength in the dual chopping scheme; Determination of the luminescence intensity of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics