Sharp line injection luminescence from InP quantum dots buried in GaInP

Anand, S.; Lindahl, J.; Pistol, M-E.; Samuelson, L.
July 1996
Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1251
Academic Journal
Focuses on a study which investigated InP quantum dots embedded in Ga[sub0.5]In[sub0.5]P. Background on low dimensional semiconductor structures; Information on injection luminescence; Sample preparation.


Related Articles

  • Preparation and formation mechanism of strong violet luminescent CdS quantum dots by using a ligand exchange strategy. Tian-Long Zhang; Yun-Sheng Xia; Xue-Lian Diao; Chang-Qing Zhu // Journal of Nanoparticle Research;Feb2008, Vol. 10 Issue 1, p59 

    Abstract  A simple and general method has been proposed for preparing strong violet emitting CdS quantum dots, in which a ligand exchange strategy was applied to surface passivation and functionalization with good reproducibility. The resulting quantum dots showed a visible violet...

  • Luminescence of a semiconductor quantum dot system. Baer, N.; Gies, C.; Wiersig, J.; Jahnke, F. // European Physical Journal B -- Condensed Matter;Apr2006, Vol. 50 Issue 3, p411 

    A microscopic theory is used to study photoluminescence of semiconductor quantum dots under the influence of Coulomb and carrier-photon correlation effects beyond the Hartree-Fock level. We investigate the emission spectrum and the decay properties of the time-resolved luminescence from...

  • Room-temperature single photon sources with definite circular and linear polarizations. Lukishova, S. G.; Bissell, L. J.; Stroud, Jr.,, C. R.; Boyd, R. W. // Optics & Spectroscopy;Mar2010, Vol. 108 Issue 3, p417 

    We report experimental results of two room-temperature single photon sources with definite polarization based on emitters embedded in either cholesteric or nematic liquid crystal hosts. In the first case, a cholesteric 1-D photonic bandgap microcavity provides circular polarization of definite...

  • Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity. Liu, H. Y.; Sellers, I. R.; Hopkinson, M.; Harrison, C. N.; Mowbray, D. J.; Skolnick, M. S. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3716 

    We describe an optical study of structures consisting of an InAlAs-GaAs strained buffer layer and an InAlAs-InGaAs composite strain-reducing layer designed to modify the confining potential of 1.3-μm InAs/GaAs quantum dots (QDs). With increasing (decreasing) InAlAs (InGaAs) thickness in the...

  • Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots. Zaâboub, Z.; Ilahi, B.; Salem, B.; Aimez, V.; Morris, D.; Sfaxi, L.; Maaref, H. // Journal of Applied Physics;Jul2010, Vol. 107 Issue 12, p124306 

    Low temperature photoluminescence (PL) measurements are carried out to investigate the influence of the high extent of intermixing induced by proton implantation and subsequent annealing on the optical and electronic properties of the InAs/GaAs quantum dots (QDs). Several QDs structures were...

  • Enhancement of photoluminescence efficiency in binary quantum dot arrays in hybrid organic/inorganic materials. Kohary, K.; Burlakov, V. M.; Pettifor, D. G.; Gibson, G. A.; Sheng, X.; Yang, C. C. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014313 

    The photoluminescence (PL) quantum efficiency of dense semiconductor colloidal quantum dot (QD) arrays is significantly reduced by the quenching of the optical excitons via defect-induced nonradiative decay channels. This luminescence quenching is facilitated by the rapid migration of excitons...

  • Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix. Gruzintsev, A.; Emelchenko, G.; Masalov, V.; Yakimov, E.; Barthou, C.; Maitre, A. // Semiconductors;Feb2009, Vol. 43 Issue 2, p197 

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO2 opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the...

  • Micro-photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B. Selçuk, E.; Hamhuis, G. J.; Nötzel, R. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p535 

    Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity...

  • Synchrotron X-ray 2D and 3D elemental imaging of CdSe/ZnS quantum dot nanoparticles in Daphnia magna. Jackson, Brian P.; Pace, Heather E.; Lanzirotti, Antonio; Smith, Randy; Ranville, James F. // Analytical & Bioanalytical Chemistry;Jun2009, Vol. 394 Issue 3, p911 

    The potential toxicity of nanoparticles to aquatic organisms is of interest given that increased commercialization will inevitably lead to some instances of inadvertent environmental exposures. Cadmium selenide quantum dots (QDs) capped with zinc sulfide are used in the semiconductor industry...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics