MeV P ion implantation damage and rapid thermal annealing effects in Fe-doped InP using Raman scattering

Shi, Bo-Rong; Cue, Nelson; Xu, Tian-Bing; Au, Standey
August 1996
Journal of Applied Physics;8/15/1996, Vol. 80 Issue 4, p2127
Academic Journal
Focuses on a study which investigated the effects of phosphorus ion implantation damage and rapid thermal annealing in iron-doped indium phosphide using Raman scattering. Theoretical background; Description of the experimental setup; Results.


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