Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy

Kurishima, Kenji; Kobayashi, Takashi; Ito, Hiroshi; Gösele, Ulrich
April 1996
Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4017
Academic Journal
Presents a study that proposed a technique for the control of zinc diffusion in indium phosphide/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy. Investigation of the anomalous zinc diffusion during low-temperature growth; Effect of growth interruption before base formation of zinc; Effect of high-temperature growth of the n[sup+] subcollector.


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