TITLE

Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides

AUTHOR(S)
Vartuli, C. B.; MacKenzie, J. D.; Lee, J. W.; Abernathy, C. R.; Pearton, S. J.; Shul, R. J.
PUB. DATE
October 1996
SOURCE
Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p3705
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on a study which measured electron-cyclotron-resonance (ECR) and reactive ion etching (RIE) rates for gallium nitride and related compounds using the same reactor and plasma parameters in metal organic group compounds. Comparison between RIE and ECR etching of plasmas; Methodology of the study; Results and discussion.
ACCESSION #
7660384

 

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