Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides

Vartuli, C. B.; MacKenzie, J. D.; Lee, J. W.; Abernathy, C. R.; Pearton, S. J.; Shul, R. J.
October 1996
Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p3705
Academic Journal
Focuses on a study which measured electron-cyclotron-resonance (ECR) and reactive ion etching (RIE) rates for gallium nitride and related compounds using the same reactor and plasma parameters in metal organic group compounds. Comparison between RIE and ECR etching of plasmas; Methodology of the study; Results and discussion.


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