TITLE

Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy

AUTHOR(S)
Botchkarev, A.; Salvador, A.; Sverdlov, B.; Myoung, J.; Morkoç, H.
PUB. DATE
May 1995
SOURCE
Journal of Applied Physics;5/1/1995, Vol. 77 Issue 9, p4455
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details a study which investigated the properties of gallium nitride films grown by electron cyclotron resonance activated nitrogen. Discussion of gallium nitride film growth; Optical and electrical characteristics of the films; Conclusions.
ACCESSION #
7659850

 

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