TITLE

Moving photoluminescence bands in GaAs1-xSbx layers grown by molecular beam epitaxy on InP substrates

AUTHOR(S)
Yu, P. W.; Stutz, C. E.; Manasreh, M. O.; Kaspi, R.; Capano, M. A.
PUB. DATE
July 1994
SOURCE
Journal of Applied Physics;7/1/1994, Vol. 76 Issue 1, p504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which examined the excitation intensity dependent photoluminescence properties of gallium arsenide[sub1-x]antimony[subx] layers grown by molecular beam epitaxy on indium phosphide substrates. Experimental details; Results and discussion; Conclusion.
ACCESSION #
7659250

 

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